Effect of substrate misorientation on the InAs/ InAlAs/ InP nanostructure morphology and lateral composition modulation in the InAlAs matrix
نویسندگان
چکیده
The authors report the self-organized growth of InAs/ InAlAs quantum wires on nominal 001 InP substrate and 001 InP substrates misoriented by 2°, 4°, and 8° towards both −110 and 110 . The influence of substrate misorientation on the structural and optical properties of these InAs/ InAlAs quantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared with that grown on nominal 001 InP substrate, the density of InAs/ InAlAs quantum wires grown on misoriented InP 001 substrates is enhanced. A strong lateral composition modulation effect take place in the InAlAs buffer layers grown on misoriented InP substrates with large off-cut angles 4° and 8° , which induces a nucleation template for the first-period InAs quantum wires and greatly improve the size distribution of InAs quantum wires. InAs/ InAlAs quantum wires grown on InP 001 substrate 8° off cut towards −110 show the best size homogeneity and photoluminescence intensity. © 2007 American Institute of Physics. DOI: 10.1063/1.2711778
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